Detection of X-ray and Gamma-ray Photons Using Silicon Diodes
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چکیده
This electric field arises -even in the absence of any external applied voltage -from a concentration gradient of donor and acceptor atoms at the interface between P-type and N-type material, and results in the well-known built-in junction voltage (~0.6V) which is typical of silicon diodes. In some applications, an additional, external back-bias may be utilized to augment this built-in voltage.
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